| Overview |
“120 kV TEM observation of a planar view sample from a 64 layer 3D NAND“
 Plane view TEM of 3D NAND flash memory was performed on 120 kV TEM. Ordered arrangement of circular memory holes was confirmed at low magnification. Concentric multi-layer structure of SiO /Poly Si /SiO /SiN /SiO was clearly observed. Lattice fringe with 0.31 nm spacing in Poly Si layer can be used to calibrate the measurement of each layer.
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