| Overview |
“High contrast observation of a 14 nm FinFET using a 120 kV TEM“
 Some dozen nm thick TEM lamella of 14 nm FinFET SRAM was prepared by FIB-SEM and observed from short direction of the Fin using 120 kV TEM. Oxide layer between Si Fin and gate electrode can be clearly observed. Spots in power spectrum, corresponding to 0.314 nm lattice of Si(111), indicate the preserved crystalline nature.
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