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Title 120 kV TEM observation of a planar view sample from a 64 layer 3D NAND
Details HTD-TEM-E033
Overview “120 kV TEM observation of a planar view sample from a 64 layer 3D NAND“

Plane view TEM of 3D NAND flash memory was performed on 120 kV TEM. Ordered arrangement of circular memory holes was confirmed at low magnification. Concentric multi-layer structure of SiO /Poly Si /SiO /SiN /SiO was clearly observed. Lattice fringe with 0.31 nm spacing in Poly Si layer can be used to calibrate the measurement of each layer.

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Related links (products)
Product type ・Focused Ion Beam Systems (FIB)
・Transmission Electron Microscopes (TEM)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2019/11/11
Inquiry Inquiry
No. HTD-TEM-E033