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Title 120 kV TEM observation of Cross sectional sample from a 64 layer 3D NAND
Details HTD-TEM-E044
Overview “120 kV TEM observation of Cross sectional sample from a 64 layer 3D NAND“

Uniformly thick cross section of 64 layer 3D NAND flash memory was prepared and imaged using 120 kV TEM. SiO and Poly-Si structures at the center of the channel hole are clearly observed at 50 kx. Features of insulating layers around the tungsten gate electrode are clearly identified at 300 kx.

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Product type Transmission Electron Microscopes (TEM)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2020/07/13
Inquiry Inquiry
No. HTD-TEM-E044