| Overview |
120 kV TEM observation of Cross sectional sample from a 64 layer 3D NAND
 Uniformly thick cross section of 64 layer 3D NAND flash memory was prepared and imaged using 120 kV TEM. SiO and Poly-Si structures at the center of the channel hole are clearly observed at 50 kx. Features of insulating layers around the tungsten gate electrode are clearly identified at 300 kx.
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