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Title Planar view observation of a 3D NAND flash memory using a 120 kV TEM
Details HTD-TEM-E019
Overview “Planar view observation of a 3D NAND flash memory using a 120 kV TEM”

Planar view 120kV TEM of memory hole in 3D NAND flash memory shows concentric multilayer structure with pretty good contrast. Lattice fringe with 0.31 nm spacing in poly silicon layer can be used to calibrate the measurement of each layer.

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Related links (products)
Product type ・Focused Ion Beam Systems (FIB)
・Transmission Electron Microscopes (TEM)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2018/11/12
Inquiry Inquiry
No. HTD-TEM-E019