| Overview |
“Hollow cone dark field observation of a 3D NAND flash memory using a 120 kV TEM“
 Plane view TEM of 3D NAND flash memory was performed on 120 kV TEM. While concentric multi-layer was clearly observed inside memory cell on bright field image, grains of tungsten gate electrode and poly-crystalline Si layer were vividly visualized on hollow cone dark field image.
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