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Title Hollow cone dark field observation of a 3D NAND flash memory using a 120 kV TEM
Details HTD-TEM-E032
Overview Hollow cone dark field observation of a 3D NAND flash memory using a 120 kV TEM

Plane view TEM of 3D NAND flash memory was performed on 120 kV TEM. While concentric multi-layer was clearly observed inside memory cell on bright field image, grains of tungsten gate electrode and poly-crystalline Si layer were vividly visualized on hollow cone dark field image.

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Related links (products)
Product type ・Focused Ion Beam Systems (FIB)
・Transmission Electron Microscopes (TEM)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2019/11/11
Inquiry Inquiry
No. HTD-TEM-E032