Hitachi

サイト名称 日立ハイテク

Title SNDM Observation of the Dopant Distribution in a SiC Power Device Cross-section
Details HTD-AFM-E008
Overview Until now, the dopant distributions in semiconductor devices was mainly evaluated with scanning spread resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). Recently, the technique of scanning nonlinear dielectric microscopy (SNDM), as shown in figure 1, was developed.
Product type Atomic Force Microscopes (AFM)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Note
Issue date 2018/01/29
Inquiry Inquiry
No. HTD-AFM-E008