| Overview |
The dopant distribution of a semiconductor device can be observed with SEM from the low-energy secondary electron contrast image reflecting the surface potential. We already observed an epitaxial impurity sample with concentration steps (1013/cm3 ～1016/cm3) with SEM and scanning nonlinear dielectric microscopy (SNDM) and reported a strong correlation between both observation results. It is well known that the resolution and the stability of dopant observations with SSRM have improved, but also the performance of SNDM observations in a vacuum improved compared to in an atmospheric surrounding. The observation of low concentrations of 1013/cm3 ～1014/cm3 and high accurate C-V curve could be realized with SNDM. |
