Hitachi

サイト名称 日立ハイテク

  • Top
  • App List
  • Fin structure observation with FE-SEM at high acce
Title Fin structure observation with SU8200 at high accelerating voltage
Details HTD-SEM-E013
Overview ”Fin structure observation with SU8200 at high accelerating voltage”

14nm SRAM Fin-FET was observed at rather high accelerating voltage. While SE images showed surface topography, BSE images revealed internal structure simultaneously. An easy and effective technique for failure analysis. 

Further details can be found on our membership website.
We would appreciate your joining.
About our membership site, see https://www.hitachi-hightech.com/global/science/guide/
Related links (products)
Product type Field Emission Scanning Electron Microscopes (FE-SEM)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Note
Issue date 2018/04/20
Inquiry Inquiry
No. HTD-SEM-E013