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Title High contrast imaging of SiC power device dopant profile with SU8200
Details HTD-SEM-E014
Overview ”High contrast imaging of SiC power device dopant profile with SU8200”

A cross section of SiC power device was prepared using FIB and ion milling. While the section prepared with only FIB did not show enough contrast, additional Ar ion milling enabled high-contrast observation of dopant layers.

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Product type Field Emission Scanning Electron Microscopes (FE-SEM)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Note
Issue date 2018/04/20
Inquiry Inquiry
No. HTD-SEM-E014