|High contrast imaging of SiC power device dopant profile with SU8200
|”High contrast imaging of SiC power device dopant profile with SU8200”
A cross section of SiC power device was prepared using FIB and ion milling. While the section prepared with only FIB did not show enough contrast, additional Ar ion milling enabled high-contrast observation of dopant layers.
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|Field Emission Scanning Electron Microscopes (FE-SEM)
|Semiconductors (incl. materials) / Devices / Components / Displays & Lighting