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Title Observation of a Semiconductor Dopant Layer Using FE-SEM
Details HTD-SEM-E004
Overview ”Observation of a Semiconductor Dopant Layer Using FE-SEM”

A cross section of MOS transistor was prepared using FIB and ion milling. While the section prepared with only FIB did not show enough contrast, additional Ar ion milling allowed high-contrast observation of dopant layers.

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Related links (products)
Product type Field Emission Scanning Electron Microscopes (FE-SEM)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Note
Issue date 2018/04/19
Inquiry Inquiry
No. HTD-SEM-E004