| Overview |
”Observation of a Semiconductor Dopant Layer Using FE-SEM”
 A cross section of MOS transistor was prepared using FIB and ion milling. While the section prepared with only FIB did not show enough contrast, additional Ar ion milling allowed high-contrast observation of dopant layers.
Further details can be found on our membership website.
We would appreciate your joining.
About our membership site, see https://www.hitachi-hightech.com/global/science/guide/ |
