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Title High Contrast SEM observation of SiC Semiconductor Dopant Profile using NX2000
Details HTD-FIB-E023
Overview “High Contrast SEM observation of SiC Semiconductor Dopant Profile using NX2000”

Dopant profile of SiC semiconductor was revealed by low energy ion beam processing. While 5kV FIB allows dopant imaging along the gate and substrate, 0.5kV Ar ion milling enables observation of p-type and n-type layers across the SiC p-n junction.

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Product type Focused Ion Beam Systems (FIB)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Note
Issue date 2017/04/15
Inquiry Inquiry
No. HTD-FIB-E023