| Overview |
“High Contrast SEM observation of SiC Semiconductor Dopant Profile using NX2000”
 Dopant profile of SiC semiconductor was revealed by low energy ion beam processing. While 5kV FIB allows dopant imaging along the gate and substrate, 0.5kV Ar ion milling enables observation of p-type and n-type layers across the SiC p-n junction.
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