Title	EDX analysis for a SiC-MOSFET semiconductor device with the NX2000
Details	HTD-FIB-E027
Overview	EDX analysis for a SiC-MOSFET semiconductor device with the NX2000
Related links (products)	Focused Ion and Electron Beam System & Triple Beam System NX2000
Product type	Focused Ion Beam Systems (FIB)
Field 1	Materials science
Field 2	Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type	Technical Data / Data Sheet
Issue date	2018/04/24
Inquiry	Inquiry
No.	HTD-FIB-E027

Title

EDX analysis for a SiC-MOSFET semiconductor device with the NX2000

Details

HTD-FIB-E027

Overview

EDX analysis for a SiC-MOSFET semiconductor device with the NX2000

Related links (products)

Product type

Focused Ion Beam Systems (FIB)

Field 1

Materials science

Field 2

Semiconductors (incl. materials) / Devices / Components / Displays & Lighting

Information type

Technical Data / Data Sheet

Issue date

2018/04/24

Inquiry

No.

HTD-FIB-E027

Fields

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Applications：EDX analysis for a SiC-MOSFET semiconductor device with the NX2000