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Applications：EDX analysis for a SiC-MOSFET semiconductor device with the NX2000

Title EDX analysis for a SiC-MOSFET semiconductor device with the NX2000
Details HTD-FIB-E027
Overview
EDX analysis for a SiC-MOSFET semiconductor device with the NX2000
Related links (products)
Product type Focused Ion Beam Systems (FIB)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2018/04/24
Inquiry Inquiry
No. HTD-FIB-E027