| Overview |
“TEM lamella preparation using STEM function of FIB-SEM”
 Real-time STEM on orthogonally-arranged FIB-SEM enabled highly accurate site-specific TEM lamella preparation from 14 nm FinFET. Targeting the gate metal, metal layers (M1) on both sides were completely removed by FIB and low energy Ar ion milling utilizing STEM observation as well as SEM.
Further details can be found on our membership website.
We would appreciate your joining.
About our membership site, see https://www.hitachi-hightech.com/global/en/support/sinavi/ |
