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Title The voltage contrast imaging of a semiconductor device with FE-SEM
Details HTD-SEM-E063
Overview “The voltage contrast imaging of a semiconductor device with FE-SEM”

Contact plug surface in SRAM area was observed with FE-SEM. At low accelerating voltage, surface potential of each plug varies by lower structure and the resultant difference in SE emission provides high-contrast image to identify NMOS, PMOS and gate area. 

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Related links (products)
Product type Field Emission Scanning Electron Microscopes (FE-SEM)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2018/04/25
Inquiry Inquiry
No. HTD-SEM-E063