||The voltage contrast imaging of a semiconductor device with FE-SEM
||“The voltage contrast imaging of a semiconductor device with FE-SEM”
Contact plug surface in SRAM area was observed with FE-SEM. At low accelerating voltage, surface potential of each plug varies by lower structure and the resultant difference in SE emission provides high-contrast image to identify NMOS, PMOS and gate area.
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||Field Emission Scanning Electron Microscopes (FE-SEM)
||Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
||Technical Data / Data Sheet