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Title High resolution imaging of cross-section of a 3D NAND Flash Memory with the FE-S
Details HTD-SEM-E064
Overview “High resolution imaging of cross-section of a 3D NAND Flash Memory with the FE-SEM”

Cross section of NAND Flash Memory was flattened by Ar ion milling and observed with high resolution FE-SEM. Each stacked layer (SiN, Poly-Si and SiO layer) in the memory cell was clearly identified with good contrast.

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Related links (products)
Product type Field Emission Scanning Electron Microscopes (FE-SEM)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2018/04/25
Inquiry Inquiry
No. HTD-SEM-E064