||High resolution imaging of cross-section of a 3D NAND Flash Memory with the FE-S
||“High resolution imaging of cross-section of a 3D NAND Flash Memory with the FE-SEM”
Cross section of NAND Flash Memory was flattened by Ar ion milling and observed with high resolution FE-SEM. Each stacked layer (SiN, Poly-Si and SiO layer) in the memory cell was clearly identified with good contrast.
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||Field Emission Scanning Electron Microscopes (FE-SEM)
||Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
||Technical Data / Data Sheet