||High resolution imaging of cross-section of a 3D NAND Flash Memory with the FE-S
||“High resolution imaging of cross-section of a 3D NAND Flash Memory with the FE-SEM”
Cross section of NAND Flash Memory was flattened by Ar ion milling and observed with high resolution FE-SEM. Each stacked layer (SiN, Poly-Si and SiO layer) in the memory cell was clearly identified with good contrast.
Further details can be found on our membership website.
We would appreciate your joining.
About our membership site, see https://www.hitachi-hightech.com/global/en/support/sinavi/
||Field Emission Scanning Electron Microscopes (FE-SEM)
||Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
||Technical Data / Data Sheet