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Title Comparison of FIB damaged layer of GaN
Details HTD-FIB-E028
Overview “Comparison of FIB damaged layer of GaN”

FIB-induced damage layer of GaN, a material susceptible to FIB damage, was investigated for 30 kV, 10 kV, 5 kV and 1 kV respectively. The lower the accelerating voltage is, the thinner the damage layer becomes. The remaining damage layer was removed by additional 1 kV Ar ion milling and the crystalline structure was preserved up to the surface.

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Related links (products)
Product type ・Focused Ion Beam Systems (FIB)
・Transmission Electron Microscopes (TEM)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2018/04/24
Inquiry Inquiry
No. HTD-FIB-E028