| Overview |
“Comparison of FIB damaged layer of GaN”
 FIB-induced damage layer of GaN, a material susceptible to FIB damage, was investigated for 30 kV, 10 kV, 5 kV and 1 kV respectively. The lower the accelerating voltage is, the thinner the damage layer becomes. The remaining damage layer was removed by additional 1 kV Ar ion milling and the crystalline structure was preserved up to the surface.
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