Hitachi

サイト名称 日立ハイテク

Title Comparison of FIB damaged layer of GaN
Details HTD-FIB-E028
Overview “Comparison of FIB damaged layer of GaN”

FIB-induced damage layer of GaN, a material susceptible to FIB damage, was investigated for 30 kV, 10 kV, 5 kV and 1 kV respectively. The lower the accelerating voltage is, the thinner the damage layer becomes. The remaining damage layer was removed by additional 1 kV Ar ion milling and the crystalline structure was preserved up to the surface.

Further details can be found on our membership website.
We would appreciate your joining.
About our membership site, see https://www.hitachi-hightech.com/global/science/guide/
Related links (products)
Product type ・Focused Ion Beam Systems (FIB)
・Transmission Electron Microscopes (TEM)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2018/04/24
Inquiry Inquiry
No. HTD-FIB-E028