| Overview |
“High quality lamella preparation of InGaN/GaN using triplebeam system”
 A lamella of InGaN/GaN was prepared using FIB-SEM-Ar Triple Beam system. Though MQW (Multiple Quantum Well) structure was unclear after 30 kV FIB processing due to FIB-induced damage, 5 kV and 2 kV FIB processing made significant improvement, and further Ar ion milling eliminated most damage.
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