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Title High quality lamella preparation of InGaN/GaN using triplebeam system
Details HTD-FIB-E029
Overview “High quality lamella preparation of InGaN/GaN using triplebeam system”

A lamella of InGaN/GaN was prepared using FIB-SEM-Ar Triple Beam system. Though MQW (Multiple Quantum Well) structure was unclear after 30 kV FIB processing due to FIB-induced damage, 5 kV and 2 kV FIB processing made significant improvement, and further Ar ion milling eliminated most damage.

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Related links (products)
Product type ・Focused Ion Beam Systems (FIB)
・Transmission Electron Microscopes (TEM)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2018/04/24
Inquiry Inquiry
No. HTD-FIB-E029