| Overview |
“Damage layer thickness of the low voltage FIB vs that of the Ar ion beam”
 Damaged layer generated during TEM lamella preparation was evaluated for Si single crystal using FIB-SEM-Ar triple beam system. Damaged layer decreased as accelerating voltage went down and 0.5 kV Ar ion milling finally reduced the damaged layer down to about 1 nm.
Further details can be found on our membership website with data library.
Looking forward to your joining.
About our membership site, see https://www.hitachi-hightech.com/global/en/support/sinavi/ |
