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Title Damage layer thickness of the low voltage FIB vs that of the Ar ion beam
Details HTD-FIB-E044
Overview “Damage layer thickness of the low voltage FIB vs that of the Ar ion beam”

Damaged layer generated during TEM lamella preparation was evaluated for Si single crystal using FIB-SEM-Ar triple beam system. Damaged layer decreased as accelerating voltage went down and 0.5 kV Ar ion milling finally reduced the damaged layer down to about 1 nm.

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Related links (products)
Product type ・Focused Ion Beam Systems (FIB)
・Transmission Electron Microscopes (TEM)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2018/11/12
Inquiry Inquiry
No. HTD-FIB-E044