| Overview |
“Damage layer thickness of the low voltage FIB vs that of the Xe ion beam“
 FIB-induced damage in Si single crystal was reduced by Xe (xenon) ion beam milling. Low energy Xe ion beam at optimum incident angle enabled reduction of the damaged layer down to about 1 nm thick.
Further details can be found on our membership website.
We would appreciate your joining.
About our membership site, see https://www.hitachi-hightech.com/global/science/guide/ |
