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Title Damage layer thickness of the low voltage FIB vs that of the Xe ion beam
Details HTD-FIB-E058
Overview “Damage layer thickness of the low voltage FIB vs that of the Xe ion beam“

FIB-induced damage in Si single crystal was reduced by Xe (xenon) ion beam milling. Low energy Xe ion beam at optimum incident angle enabled reduction of the damaged layer down to about 1 nm thick.

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Related links (products)
Product type ・Focused Ion Beam Systems (FIB)
・Transmission Electron Microscopes (TEM)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2019/03/12
Inquiry Inquiry
No. HTD-FIB-E058