| Overview |
“High resolution SEM observation of a 10nm Fin-FET section processed by FIB“
 Cross section of 10 nm FinFET was observed by high-resolution SEM on FIB-SEM. While SE image shows the structure of the oxide layer (STI, Shallow Trench Isolation), BSE image has strong compositional contrast to identify gate and metals without charging effects. SE/BSE mixed image contains both information.
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