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Title High resolution SEM observation of a 10nm Fin-FET section processed by FIB
Details HTD-FIB-E065
Overview “High resolution SEM observation of a 10nm Fin-FET section processed by FIB“

Cross section of 10 nm FinFET was observed by high-resolution SEM on FIB-SEM. While SE image shows the structure of the oxide layer (STI, Shallow Trench Isolation), BSE image has strong compositional contrast to identify gate and metals without charging effects. SE/BSE mixed image contains both information.

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Related links (products)
Product type Focused Ion Beam Systems (FIB)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2019/11/11
Inquiry Inquiry
No. HTD-FIB-E065