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Title High Resolution Cut&See Observation of a 10 nm node FinFET Device
Details HTD-FIB-E069
Overview “High Resolution Cut&See Observation of a 10 nm node FinFET Device“

Serial cross section images of 10 nm node FinFET were collected in Lg direction at 2 nm interval using high resolution FIB-SEM. Unique structures were recognized at PMOS, NMOS and in between to allow detection of these structural changes.

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Product type Focused Ion Beam Systems (FIB)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2019/11/11
Inquiry Inquiry
No. HTD-FIB-E069