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Title Crystal orientation measurement of 3D NAND flash memory using TKD method
Details HTD-SEM-E115
Overview Crystal orientation measurement of 3D NAND flash memory using TKD method

Crystal orientation of FIB-prepared ultra-thin 3D NAND flash memory was determined at higher spatial resolution by TKD method. Band Contrast map and Phase map showed the shape and the size of crystal grains of poly-Si in circular memory cells and surrounding tungsten. Tungsten crystal grains were found ranging from 10 nm to 50 nm.

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Related links (products)
Product type ・Field Emission Scanning Electron Microscopes (FE-SEM)
・Focused Ion Beam Systems (FIB)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2019/11/12
Inquiry Inquiry
No. HTD-SEM-E115