| Overview |
“Low acceleration voltage STEM observation and EDX analysis of a 14 nm FinFET“
 14 nm FinFET device was analyzed using 30 kV STEM. HfO2 layer, SiO2 layer (1.5 nm thick each) and TiN barrier metal layer (3 nm thick) were clearly observed in BF-STEM image. DF-STEM image and EDX map revealed complex elemental distribution with nanometer spatial resolution.
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