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Title Low acceleration voltage STEM observation and EDX analysis of a 14 nm FinFET
Details HTD-SEM-E117
Overview “Low acceleration voltage STEM observation and EDX analysis of a 14 nm FinFET“

14 nm FinFET device was analyzed using 30 kV STEM. HfO2 layer, SiO2 layer (1.5 nm thick each) and TiN barrier metal layer (3 nm thick) were clearly observed in BF-STEM image. DF-STEM image and EDX map revealed complex elemental distribution with nanometer spatial resolution.

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Related links (products)
Product type ・Field Emission Scanning Electron Microscopes (FE-SEM)
・Focused Ion Beam Systems (FIB)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2019/11/12
Inquiry Inquiry
No. HTD-SEM-E117