| Overview |
“High Resolution Plan View Observation and EDX Analysis of DRAM Capacitors“
 DRAM capacitors was analyzed using ultrahigh resolution SEM and 30 kV STEM. Regularly arranged capacitors and their concentric multi layers (6 nm thick each) were observed in UHR SEM image. STEM images and EDX maps revealed concentric multi-layer structure of SiGe, TiN, ZrO2, etc. with thickness of 1 to 6 nm.
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