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Title High Resolution Plan View Observation and EDX Analysis of DRAM Capacitors
Details HTD-SEM-E118
Overview High Resolution Plan View Observation and EDX Analysis of DRAM Capacitors

DRAM capacitors was analyzed using ultrahigh resolution SEM and 30 kV STEM. Regularly arranged capacitors and their concentric multi layers (6 nm thick each) were observed in UHR SEM image. STEM images and EDX maps revealed concentric multi-layer structure of SiGe, TiN, ZrO2, etc. with thickness of 1 to 6 nm.

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Related links (products)
Product type ・Field Emission Scanning Electron Microscopes (FE-SEM)
・Sample Preparation Devices for TEM/SEM
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2019/11/12
Inquiry Inquiry
No. HTD-SEM-E118