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Title Voltage contrast imaging of a 7 nm node device with an FE-SEM
Details HTD-SEM-E122
Overview Voltage contrast imaging of a 7 nm node device with an FE-SEM

7 nm node SRAM device was observed at low accelerating voltage (300 V). Surface potential-induced subtle difference in secondary electron emission was detected to discern plugs with different underlying structure (PMOS/NMOS/Gate).

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Related links (products)
Product type Field Emission Scanning Electron Microscopes (FE-SEM)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2019/11/12
Inquiry Inquiry
No. HTD-SEM-E122