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Title TEM observation of a FinFET in 14 nm process SRAM
Details HTD-FIB-E080
Overview “TEM observation of a FinFET in 14 nm process SRAM“

TEM lamella of SRAM device was prepared to preserve a single fin less than 20 nm thick. Observed from short direction of the fin, a few nanometers thick gate oxide layer and Si lattice fringes are clearly observed.

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Related links (products)
Product type ・Focused Ion Beam Systems (FIB)
・Transmission Electron Microscopes (TEM)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2020/04/01
Inquiry Inquiry
No. HTD-FIB-E080