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Title Removal of Ga ion implanted layers on the Si lamella by Ar ion finishing
Details HTD-FIB-E081
Overview “Removal of Ga ion implanted layers on the Si lamella by Ar ion finishing“

Residual Ga (Gallium) implanted in Si (Silicon) lamella was evaluated by EDX spectroscopy after 30 kV FIB, 5 kV FIB and 1 kV Ar finishing. While Ga was detected after 30 kV FIB and 5 kV FIB, it was not detected after 1 kV Ar finishing. The Ga implanted layer was removed by Ar ion irradiation.

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Related links (products)
Product type Focused Ion Beam Systems (FIB)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2020/05/20
Inquiry Inquiry
No. HTD-FIB-E081