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Title Lamella preparation of semiconductor device for TEM observation
Details HTD-FIB-E083
Overview “Lamella preparation of semiconductor device for TEM observation“

TEM lamella was prepared from semiconductor device using FIB-SEM-Ar Triple Beam system. 1kV Ar finishing enabled sharper imaging of the interface between oxide layer and Si substrate. Si substrate appeared brighter after removal of implanted Ga. Further 0.5 kV Ar finishing clearly visualized Si lattice fringes and the interface roughness.

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Related links (products)
Product type ・Focused Ion Beam Systems (FIB)
・Transmission Electron Microscopes (TEM)
Field 1 Materials science
Field 2 Semiconductors (incl. materials) / Devices / Components / Displays & Lighting
Information type Technical Data / Data Sheet
Issue date 2020/07/02
Inquiry Inquiry
No. HTD-FIB-E083