| Overview |
“Lamella preparation of semiconductor device for TEM observation“
 TEM lamella was prepared from semiconductor device using FIB-SEM-Ar Triple Beam system. 1kV Ar finishing enabled sharper imaging of the interface between oxide layer and Si substrate. Si substrate appeared brighter after removal of implanted Ga. Further 0.5 kV Ar finishing clearly visualized Si lattice fringes and the interface roughness.
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