| Overview |
”TEM lamella preparation of a target in deeper sample position by IM and FIB combined process”
 A TEM lamella of TSV/Microbump interface deep inside a semiconductor with 4-layer TSVs was prepared using FIB-SEM together with BIB (Broad Ion Beam) milling system. After 45 ° oblique sectioning by BIB milling, the target structure was extracted from the oblique cross section using Micro-sampling (in situ lift out) technique. The interface between TSV and microbump, TSV barrier metal, and insulating layer around TSV were clearly observed using 200 kV STEM.
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