| Overview |
”3D observation of the DRAM memory cell”
 Serial cross-sectional SEM images of DDR5 (Double Data Rate 5) DRAM (1y nm generation) were automatically acquired on an orthogonally-arranged FIB-SEM. The cross-sectional structure of word lines with approximately 10 nm linewidth was clearly observed. Reconstructed results three-dimensionally visualized the nanostructure of plugs, bit lines, word lines and active area.
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