Features
This dedicated nano-probing system was co-developed with a number of semiconductor manufacturing companies for
- Improved probe stability and current for increased S/N and EBAC performance
- Increased electrical image shift to ±75 µm
- Eight-probe handling system
- Specimen-temperature controllable stage (-40°C to 150°C)
- CCD camera for both top-down and side views to assist with smoother probing
- A high-precision specimen stage for improved positioning accuracy
- An in-situ probe exchange system
- Electron Beam Absorbed Current (EBAC) function
- Voltage-applied EBAC function (Dynamic Induced EBAC "DI-EBAC") (Optional)
- Pulsed IV measurement for diagnosing resistive gate electrode defects (Optional)
User-Friendly Interface
Fully controllable GUI
User-Friendly Design
Top-down CCD camera image for optimizing the position of probes to the specimen in the X and Y axes
Side-view CCD camera image for optimizing the position of probes to the specimen in the Z axis
Premium Image Quality
EBAC image of a multi-layer circuit Accelerating voltage: 20kV
High-Resolution and High-Quality Imaging Performance
High-quality and high-resolution image for high-precision probe positioning