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Vortex®-EM X-ray Detector

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Why Our Products Are Better

  • Large Active Area
  • High Throughput
  • Reliability
 

General Description

General Description - Vortex®-EM

Vortex®-EM silicon drift X-ray detectors feature active areas between 30 mm2 and 80 mm2.
Vortex®-EM detectors are produced from high purity silicon using state-of-the-art CMOS production technology. They feature excellent energy resolution (＜130 eV FWHM at Mn Kα is typical) and a high count rate capability. At 0.1 µs PT with an output count rate of 900 kcps is achieved. A unique feature of these detectors is their ability to process high count rates with very small loss in energy resolution and minimal peak shift with count rate.

Typical Applications

  • X-ray fluorescence (XRF) spectroscopy both bulk and micro-fluorescence
  • Micro-analysis for SEM and TEM
  • Synchrotron radiation applications
  • Partical Induced X-ray Emission (PIXE)
  • Process control
  • Fast X-ray mapping

The Vortex®-EM is operated at near room temperature and cooled by a thermoelectric cooler (TEC) and can be cycled as frequently as needed without any degradation in detector performance. Cool down times are typically less than 2 minutes.

The Vortex®-EM X-ray spectroscopy system include a detector unit and control box which includes power supplies for the detector, TEC and an optional digital pulse processor with PI-SPEC Software.

The complete detector also contains a charge-sensitive preamplifier and temperature stabilization system, which eliminates concerns of varying ambient temperature.

Features

  • Extended probe (300 mm)
  • Available in 30, 40, 50, 65, 70, 80 mm2
  • Available in thickness of 0.5 and 1 mm
  • Superb energy resolution
  • Detector temperature stabilization
  • Additional sizes are available under special contracts
  • Small and compact package for minimum vibration
  • Digital pulse processor (DPP) with PI-SPEC Software

Specifications

Specifications
NameSilicon Drift X-Ray Detector Spectrometer
TypeVortex®-EM
OverviewVortex®-EM silicon drift X-ray detectors feature active areas between 30 mm2 and 80 mm2. Vortex®-EM detectors are produced from high purity silicon using state-of-the-art CMOS production technology. They feature excellent energy resolution (＜130 eV FWHM at Mn Kα is typical) and a high count rate capability. At 0.1 µs PT with an output count rate of 900 kcps. A unique feature of these detectors is their ability to process high count rates with very small loss in energy resolution and minimal peak shift with count rate. The Vortex®-EM is operated at near room temperature and cooled by a thermoelectric cooler (TEC) and can be cycled as frequently as needed without any degradation in detector performance. Cool down times are typically less than 2 minutes. The Vortex®-EM X-ray spectroscopy system include a detector unit and control box which includes power supplies for the detector, TEC and an optional digital pulse processor with PI-SPEC Software. The complete detector also contains a charge-sensitive preamplifier and temperature stabilization system, which eliminates concerns of varying ambient temperature.
Typical Applications
  • X-ray fluorescence (XRF) spectroscopy – both bulk and micro-fluorescence
  • Micro-analysis for SEM and TEM
  • Synchrotron radiation applications
  • Partical Induced X-ray Emission (PIXE)
  • Process control
  • Fast X-ray mapping
Features
  • Extended probe (300 mm)
  • Available in 30, 40, 50, 65, 70, 80 mm2
  • Superb energy resolution
  • Detector temperature stabilization
  • Additional sizes are available under special contracts
  • Small and compact package for minimum vibration
  • Digital pulse processor (DPP) with PI-SPEC Software
US Patent Number
  • 6,455,858
  • 7,129,501 B2

Specifications

Specifications
DetectorMaterial – Silicon Active Area – 30-80 mm2 - Thickness – 0.5 mm and 1 mm
WindowMaterial – Thin polymer or Be
Energy Resolution (FWHM) @ 5.9 keV@ 1.0 µs Peaking Time 124e V - 138 eV
@ 0.5 µs Peaking Time 130 eV - 139 eV
@ 0.25 µs Peaking Time 135 eV - 148 eV
@ 0.1 µs Peaking Time 145 eV - 180 eV
PreamplifierType – Charge sensitive, 1.5mV/keV Signal polarity – Positive Reset – Electrical, ＜1 µs duration Rise time – ＜100 ns
CoolingThermoelectric
Power ConsumptionNominal voltage – 110/230 V (switchable)
Power supply and detector – 40 W Maximum
Physical SpecificationsDetector package weight – 3,375 g Length – 550 mm (300 mm probe)
Height × Width – 114 mm × 102 mm Cable Standard Length – 3 m
Digital Pulse Processor (DPP)
Digital ControlsGain – 16-Bit DAC Peaking Time – 0.25 - 16 µs Preset Time – Up to 1717s
Data OutputSpectrum Size – 1024, 2048 or 4096 channels Channel Size – 10, 20 or 40 eV
Integral Non-linearity0.1% of full-scale output
Deadtime CorrectionBetter than ± 0.5% accuracy from 0 to 120,000 cps at 4 µs peaking time
SoftwarePI-SPEC software* – Allows user to acquire, manipulate spectra. Pentium III or later with at least 64 MB memory and 30 MB available disk space.
VTXDLL package* – Dynamic-Link Library to facilitate host software communication with the DPP. Pentium III or later with at least 64 MB memory and 30 MB available disk space.
  • * Requires a standard USB2.0 port

Vortex CUBE Count Rate; XIA Mercury DPP

Vtx QE

Dimensional Drawing

 

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